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Same model may have multiple batches, images only for reference.
FDMS8026S Real Image
Same model may have multiple batches, images only for reference.

FDMS8026S

Part No FDMS8026S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V POWER56
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 19A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 37nC @ 10V
Max Input Capacitance 2280pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 41W (Tc)
Maximum Rds On at Id,Vgs 4.3 mOhm @ 19A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Power56
Dimension 8-PowerTDFN
Win Source Part Number 016084-FDMS8026S
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMS8026S CAD Model

Description

The Fairchild/ON Semiconductor FDMS8026S is a MOSFET technology-based N-channel device.

  • Technology: MOSFET, N-channel
  • Power Dissipation: 2.5W (Ta), 41W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 19A (Ta), 22A (Tc)
  • Rds On (Max) at Id, Vgs: 4.3 mOhm @ 19A, 10V
  • Mounting: SMD (SMT)
  • Packaging: Reel (3k pcs)

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1956 $59.7800
120+ $0.9811 $117.7320
185+ $0.9503 $175.8055
255+ $0.9198 $234.5490
325+ $0.8890 $288.9250
435+ $0.7971 $346.7385
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,300 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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