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Same model may have multiple batches, images only for reference.
FDMS86520L Real Image
Same model may have multiple batches, images only for reference.

FDMS86520L

Part No FDMS86520L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 60V 13.5A 8PQFN / Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 13.5A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 4615pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 8.2 mOhm @ 13.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (5x6), Power56
Dimension 8-PowerTDFN
Win Source Part Number 016090-FDMS86520L
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 3k pcs
Family Name FDMS86520L
Introduction Date July 29, 2010
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian FDMS86520L CAD Model

Description

The Fairchild/ON Semiconductor 016090-FDMS86520L is an N-channel MOSFET.

  • Package: 8-PQFN (5x6), Power56
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 13.5A (Ta), 22A (Tc) @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 8.2 mOhm @ 13.5A, 10V
  • Popularity: High
  • Supply and Demand: Limited
  • Manufacturer: Fairchild/ON Semiconductor
  • Introduction Date: July 29, 2010

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115+ $1.0263 $118.0245
175+ $0.9941 $173.9675
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420+ $0.8338 $350.1960
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