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FDP032N08B

Part No FDP032N08B
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 120A TO-220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 144nC @ 10V
Max Input Capacitance 10965pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 263W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 204104-FDP032N08B
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDP032N08B CAD Model

Description

The Fairchild/ON Semiconductor 204104-FDP032N08B is a MOSFET with an N-Channel polarity. This product is active and has a high popularity in the market. The supply and demand status is balanced.

  • Packaging: Tube/Rail
  • Mounting Technology: Through-Hole
  • Power Dissipation (Max): 263W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current @ 25°C: 120A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Gate Charge (Max): 144nC @ 10V
  • Input Capacitance (Max): 10965pF @ 40V
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6023 $56.0805
80+ $1.3147 $105.1760
120+ $1.2736 $152.8320
165+ $1.2325 $203.3625
210+ $1.1914 $250.1940
285+ $1.0682 $304.4370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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