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Same model may have multiple batches, images only for reference.
FDP18N20F Real Image
Same model may have multiple batches, images only for reference.

FDP18N20F

Part No FDP18N20F
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFET 200V, 18A, 0.14Ω
Datasheet
FDP18N20F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series UniFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1180pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 100W (Tc)
Rds On (Maximum) @ Id, Vgs 145 mOhm @ 9A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 1173871-FDP18N20F
Manufacturer Homepage www.fairchildsemi.com
Family Name FDP18N20F
Introduction Date September 14, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FDP18N20F CAD Model

Description

The Fairchild/ON Semiconductor FDP18N20F is a MOSFET transistor that belongs to the UniFET series.

  • Mounting Type: Through-hole
  • Package: TO-220-3
  • Maximum Drain-Source Voltage: 200V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Power Dissipation: 100W
  • Maximum Current Drain: 18A @ 25°C
  • Input Capacitance: 1180pF @ 25V
  • Gate Charge: 26nC @ 10V
  • Maximum Rds On: 145 mOhm @ 9A and 10V
  • Estimated EOL Date: 2024
  • Supply and Demand Status: Balanced

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115+ $1.0411 $119.7265
175+ $1.0085 $176.4875
240+ $0.9760 $234.2400
310+ $0.9436 $292.5160
410+ $0.8459 $346.8190
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