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Same model may have multiple batches, images only for reference.
IRFR430BTM Real Image
Same model may have multiple batches, images only for reference.

IRFR430BTM

Part No IRFR430BTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1050 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-3 (DPAK)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 160809-IRFR430BTM
Ultra Librarian 3D Model Ultra Librarian IRFR430BTM CAD Model

Description

The IRFR430BTM is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Vdss: 500 V
  • Id: 3.5A @ 25°C
  • Rds On: 1.5 Ohm @ 1.75A, 10V
  • Vgs(th): 4V @ 250µA
  • Power Dissipation: 2.5W
  • Operating Temperature Range: -55°C to 150°C
  • Package: TO-252-3
  • Manufacturer: Fairchild/ON Semiconductor
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
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32+ $3.6845 $117.9040
49+ $3.5701 $174.9349
67+ $3.4546 $231.4582
87+ $3.3391 $290.5017
116+ $2.9938 $347.2808
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Availability: 21,000 pieces
MOQ: 13 pcs
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