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FDP2572

Part No FDP2572
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 29A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 4A (Ta), 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 1770pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 135W (Tc)
Maximum Rds On at Id,Vgs 54 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 204117-FDP2572
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDP2572 CAD Model

Description

The Fairchild/ON Semiconductor FDP2572 is a N-Channel MOSFET that has a maximum power dissipation of 135W (Tc).

  • Polarity: N-Channel
  • Maximum Power Dissipation: 135W (Tc)

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