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Same model may have multiple batches, images only for reference.
FDP2670 Real Image
Same model may have multiple batches, images only for reference.

FDP2670

Part No FDP2670
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 19A TO-220AB
Datasheet
FDP2670 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 19A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1320pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 93W (Tc)
Maximum Rds On at Id,Vgs 130 mOhm @ 10A, 10V
Temperature Range - Operating -65°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1038318-FDP2670
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDP2670 CAD Model

Description

The Fairchild/ON Semiconductor 433581 is a through-hole mounting N-channel MOSFET with a maximum power dissipation of 93W (Tc).

  • Power Dissipation (Max): 93W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current @ 25°C: 19A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 38nC @ 10V
  • Product Category: Discrete Semiconductor Products
  • Lifecycle Status: Obsolete(EOL)
  • Temperature Range: -65°C to 175°C (TJ)
  • Package: TO-220-3
  • Maximum Rds On @ Id,Vgs: 130 mOhm @ 10A, 10V
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3412 $58.5300
61+ $1.9219 $117.2359
94+ $1.8619 $175.0186
129+ $1.8018 $232.4322
166+ $1.7417 $289.1222
222+ $1.5616 $346.6752
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