The Fairchild/ON Semiconductor FDP2710 is a N-Channel MOSFET with a drain-source breakdown voltage of 250V and a continuous drain current of 50A at 25°C. It has a maximum power dissipation of 260W at Tc, and a maximum Rds On of 42.5 mOhm at 25A and 10V. The FDP2710 is packaged in TO-220-3 and is mounted through-hole.

• Polarity: N-Channel
• Drain-Source Breakdown Voltage: 250V
• Continuous Drain Current: 50A @ 25°C
• Maximum Power Dissipation: 260W (Tc)
• Package: TO-220-3
• Mounting Style: Through-Hole
• Maximum Rds On: 42.5 mOhm @ 25A, 10V
• Gate-Source Threshold Voltage: 5V @ 250μA
• Maximum Gate Charge: 101nC @ 10V
• Maximum Input Capacitance: 7280pF @ 25V