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Same model may have multiple batches, images only for reference.
FDP6670AL Real Image
Same model may have multiple batches, images only for reference.

FDP6670AL

Part No FDP6670AL
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A TO-220
Datasheet
FDP6670AL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 33nC @ 5V
Max Input Capacitance 2440pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 40A, 10V
Temperature Range - Operating -65°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 067030-FDP6670AL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDP6670AL CAD Model

Description

The Fairchild/ON Semiconductor 067030-FDP6670AL is a N-Channel MOSFET designed for use in Discrete Semiconductor Products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 80A (Ta)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On at Id,Vgs: 6.5 mOhm @ 40A, 10V
  • Power Dissipation (Max): 68W (Tc)
  • Package: Through Hole TO-220-3
  • Operating Temperature Range: -65°C to 175°C (TJ)
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
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Availability: 4,600 pieces
MOQ: 115 pcs
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