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FDP6676

Part No FDP6676
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series PowerTrench®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 84A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 42A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 5324 pF @ 15 V
Power Dissipation (Max) 93W (Tc)
Temperature Range - Operating -65°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Standard Package 307 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 129654-FDP6676
Ultra Librarian 3D Model Ultra Librarian FDP6676 CAD Model

Description

The FDP6676 is a high power N-Channel MOSFET transistor from the PowerTrench® series by Fairchild/ON Semiconductor. It is designed for use in discrete semiconductor products, specifically in transistors and FETs.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 84A @ 25°C
  • On-Resistance (Rds On): 6mOhm @ 42A, 10V
  • Gate Charge (Qg): 60nC @ 5V
  • Input Capacitance (Ciss): 5324pF @ 15V
  • Package: TO-220-3
  • Mounting Type: Through-Hole
  • Operating Temperature: -65°C to 175°C
  • Power Dissipation: 93W

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7408 $60.9280
85+ $1.4284 $121.4140
130+ $1.3838 $179.8940
175+ $1.3391 $234.3425
225+ $1.2945 $291.2625
300+ $1.1605 $348.1500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,280 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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