The Fairchild/ON Semiconductor FDS3170N7 is an N-channel MOSFET.

• Power Dissipation: 3W (Ta)
• Drain-Source Breakdown Voltage: 100V
• Mounting Type: SMD (SMT)
• Package: 8-SO
• Maximum Rds On: 26 mOhm @ 6.7A, 10V
• Continuous Drain Current: 6.7A (Ta) @ 25°C
• Gate-Source Threshold Voltage: 4V @ 250μA
• Maximum Gate Charge: 77nC @ 10V
• Maximum Input Capacitance: 2714pF @ 50V
• Operating Temperature: -55°C to 150°C (TJ)
• Applications: Power management and automotive applications
• Package Type: 8-SOIC (0.154", 3.90mm Width)
• Supply and Demand: Sufficient