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Same model may have multiple batches, images only for reference.
FDS3612 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDS3612

Part No FDS3612
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 3.4A 8SOIC
Datasheet
FDS3612 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 632pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 120 mOhm @ 3.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1038373-FDS3612
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDS3612 CAD Model

Description

The FDS3612 is a N-Channel MOSFET designed by Fairchild/ON Semiconductor.

  • Power Dissipation: 2.5W (Ta)
  • Package: 8-SO
  • Continuous Drain Current: 3.4A (Ta)
  • Drain-Source Breakdown Voltage: 100V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On @ Id,Vgs: 120 mOhm @ 3.4A, 10V

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