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Same model may have multiple batches, images only for reference.
FDS4885C Real Image
Same model may have multiple batches, images only for reference.

FDS4885C

Part No FDS4885C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 40V 7.5A/6A 8SOIC
Datasheet
FDS4885C Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 7.5A, 6A
Maximum Rds On at Id,Vgs 22 mOhm @ 7.5A, 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 21nC @ 10V
Max Input Capacitance 900pF @ 20V
Maximum Power Dissipation 900mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 067079-FDS4885C
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDS4885C CAD Model

Description

The supply and demand status of this component is limited. The FDS4885C is a dual N and P-channel MOSFET designed for use in a wide range of applications, including power management, load switching, and battery protection.

  • On-Resistance: 22 mOhm at 7.5 A and 10 V, which reduces power dissipation and improves efficiency.
  • Maximum Power Dissipation: 900 mW, making it suitable for high-power applications.
  • Package Size: SOIC-8, which saves board space and reduces system cost.
  • Operating Temperature Range: -55°C to +150°C, making it suitable for use in harsh environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9665 $57.9900
150+ $0.7932 $118.9800
230+ $0.7683 $176.7090
315+ $0.7435 $234.2025
405+ $0.7188 $291.1140
540+ $0.6444 $347.9760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,200 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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