The Fairchild/ON Semiconductor FDS6890A is a 2 N-Channel (Dual) FET, designed for use in Discrete Semiconductor Products.

• Device Type: 2 N-Channel (Dual) FET
• FET Feature: Logic Level Gate
• Drain-Source Breakdown Voltage: 20V
• Temperature Range: -55°C to 150°C (TJ)
• Maximum Power Dissipation: 900mW
• Continuous Drain Current (at 25°C): 7.5A
• Gate-Source Threshold Voltage: 1.5V at 250μA
• Max Gate Charge: 32nC at 4.5V
• Max Input Capacitance: 2130pF at 10V
• Rds On (Max): 18 mOhm at 7.5A, 4.5V
• Supply and Demand: Balanced
• Quantity per Package: 2,500