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Same model may have multiple batches, images only for reference.
FDS7064SN3 Real Image
Same model may have multiple batches, images only for reference.

FDS7064SN3

Part No FDS7064SN3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A 8-SOIC
Datasheet
FDS7064SN3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 35nC @ 5V
Max Input Capacitance 2800pF @ 15V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.13W (Ta)
Maximum Rds On at Id,Vgs 8 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 100438-FDS7064SN3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDS7064SN3 CAD Model

Description

The N-channel MOSFET from Fairchild/ON Semiconductor is designed for discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 16A @ 25°C
  • Mounting Type: SMD (SMT)
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Rds On (Max): 8 mOhm @ 16A, 10V
  • Gate-Source Threshold Voltage: 3V @ 1mA
  • Gate-Source Voltage (Max): ±16V
  • Gate Charge (Max): 35nC @ 5V
  • Input Capacitance: 2800pF @ 15V
  • Power Dissipation (Max): 3.13W (Ta)
  • Status: Obsolete(EOL)
  • Temperature Range: -55°C to 150°C (TJ)

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