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Same model may have multiple batches, images only for reference.
FQAF33N10L Real Image
Same model may have multiple batches, images only for reference.

FQAF33N10L

Part No FQAF33N10L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 25.8A TO-3PF
Datasheet
FQAF33N10L Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 25.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 40nC @ 5V
Max Input Capacitance 1630pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 52 mOhm @ 12.9A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-3PF
Dimension SC-94
Win Source Part Number 040331-FQAF33N10L
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQAF33N10L CAD Model

Description

The FQAF33N10L is an obsolete (EOL) MOSFET device from Fairchild/ON Semiconductor. It is an N-channel device.

  • Mounting: Through-hole
  • Case: TO-3PF
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 25.8A (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 52 mOhm @ 12.9A, 10V
  • Power Dissipation: 83W (Tc)
  • Suitable for: Discrete semiconductor products

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90+ $1.2844 $115.5960
140+ $1.2439 $174.1460
195+ $1.2035 $234.6825
250+ $1.1631 $290.7750
335+ $1.0430 $349.4050
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