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Same model may have multiple batches, images only for reference.
FQD17P06TF Real Image
Same model may have multiple batches, images only for reference.

FQD17P06TF

Part No FQD17P06TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 12A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 900pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta), 44W (Tc)
Maximum Rds On at Id,Vgs 135 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039699-FQD17P06TF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Automotive, Power Management
Ultra Librarian 3D Model Ultra Librarian FQD17P06TF CAD Model

Description

The 1039699-FQD17P06TF is a P-Channel MOSFET from Fairchild/ON Semiconductor.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current (25°C): 12A (Tc)
  • Maximum Rds On @ Id,Vgs: 135 mOhm @ 6A, 10V
  • Package: D-Pak
  • Mounting Technology: SMD (SMT)
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Balanced
  • Applications: Automotive and power management

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