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FQI7N80

Part No FQI7N80
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 6.6A I2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 52nC @ 10V
Max Input Capacitance 1850pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 167W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 3.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK (TO-262)
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040343-FQI7N80
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQI7N80 CAD Model

Description

The Fairchild/ON Semiconductor FQI7N80 is a N-Channel MOSFET.

  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 6.6A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Gate-Source Voltage (Max): ±30V
  • Package: I2PAK (TO-262) with TO-262-3 Long Leads, I2Pak, TO-262AA dimension
  • Category: Discrete Semiconductor Products
  • Rds On (Max): 1.5 Ohm @ 3.3A, 10V
  • Power Dissipation: 3.13W (Ta), 167W (Tc)
  • Mounting Type: Through Hole
  • Packaging: Tube/Rail
  • Market Status: Popular with High Demand

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6052 $60.5200
235+ $0.4967 $116.7245
360+ $0.4816 $173.3760
500+ $0.4655 $232.7500
645+ $0.4505 $290.5725
860+ $0.4043 $347.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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