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FQP5N80

Part No FQP5N80
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 4.8A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 1250pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 2.6 Ohm @ 2.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 067438-FQP5N80
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQP5N80 CAD Model

Description

The Fairchild/ON Semiconductor FQP5N80 is an N-Channel MOSFET.

  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current (25°C): 4.8A
  • Maximum Rds On (Id=2.4A, Vgs=10V): 2.6 Ohm
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 33nC @ 10V
  • Maximum Input Capacitance: 1250pF @ 25V
  • Package: TO-220-3
  • Mounting: Through Hole
  • Power Dissipation (Tc): 140W
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6052 $60.5200
235+ $0.4967 $116.7245
360+ $0.4816 $173.3760
500+ $0.4655 $232.7500
645+ $0.4505 $290.5725
860+ $0.4043 $347.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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