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FQD60N03LTM

Part No FQD60N03LTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series QFET™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 15 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-3 (DPAK)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 132503-FQD60N03LTM
Ultra Librarian 3D Model Ultra Librarian FQD60N03LTM CAD Model

Description

The FQD60N03LTM is a single N-channel MOSFET designed for high-performance power management applications.

  • Channel Type: N-channel
  • Drain-to-Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 30A
  • Rds On (Max): 23mOhm at 30A and 10V gate-to-source voltage (Vgs)
  • Gate Charge (Qg): 46nC at 10V
  • Input Capacitance (Ciss): 900pF at 15V
  • Package: TO-252-3, DPak
  • Operating Temperature: -55°C to 150°C
  • Manufacturer: Fairchild/ON Semiconductor
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
280+ $0.2079 $58.2120
680+ $0.1709 $116.2120
1,050+ $0.1652 $173.4600
1,440+ $0.1605 $231.1200
1,870+ $0.1548 $289.4760
2,500+ $0.1386 $346.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,000 pieces
MOQ: 280 pcs
Order Increment : 1 pcs
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