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Same model may have multiple batches, images only for reference.
FQT1N80TF_WS Real Image
Same model may have multiple batches, images only for reference.

FQT1N80TF_WS

Part No FQT1N80TF_WS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 0.2A SOT-223
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 7.2nC @ 10V
Max Input Capacitance 195pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.1W (Tc)
Maximum Rds On at Id,Vgs 20 Ohm @ 100mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223-3
Dimension TO-261-4, TO-261AA
Win Source Part Number 1039969-FQT1N80TF_WS
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQT1N80TF_WS CAD Model

Description

The Fairchild/ON Semiconductor FQT1N80TF_WS is an N-channel MOSFET that offers a range of features, including a drain-source breakdown voltage of 800V, continuous drain current at 25°C of 200mA (Tc), and a maximum gate charge of 7.2nC at 10V.

  • Product Name: FQT1N80TF_WS
  • Manufacturer: Fairchild/ON Semiconductor
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current @ 25°C: 200mA (Tc)
  • Maximum Gate Charge @ 10V: 7.2nC
  • Package: Reel-TR
  • Mounting: SMD (SMT)
  • Technology: MOSFET
  • Polarity: N-channel

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