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Same model may have multiple batches, images only for reference.
FQU10N20CTU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQU10N20CTU

Part No FQU10N20CTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 7.8A IPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 7.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 510pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 360 mOhm @ 3.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 001263-FQU10N20CTU
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 5,040
Ultra Librarian 3D Model Ultra Librarian FQU10N20CTU CAD Model

Description

The Fairchild/ON Semiconductor electronic component with Win Source Part Number 001263-FQU10N20CTU is an N-Channel MOSFET technology with a drain-source breakdown voltage of 200V.

  • Status: Active
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand: Sufficient
  • Quantity per Package: 5,040

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,310 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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