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Same model may have multiple batches, images only for reference.
FQU1N60CTU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQU1N60CTU

Part No FQU1N60CTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1A IPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 6.2nC @ 10V
Max Input Capacitance 170pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
Maximum Rds On at Id,Vgs 11.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 001264-FQU1N60CTU
Popularity Medium
Supply and Demand Status Limited
Quantity per package 5,040
Ultra Librarian 3D Model Ultra Librarian FQU1N60CTU CAD Model

Description

The Fairchild/ON Semiconductor electronic component with Win Source Part Number 001264-FQU1N60CTU is an N-channel MOSFET.

  • Manufacturer: Fairchild/ON Semiconductor
  • Package: I-Pak
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 1A (Tc) @ 25°C
  • Maximum Rds On: 11.5 Ohm @ 500mA, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4636 $50.9960
265+ $0.3804 $100.8060
410+ $0.3686 $151.1260
565+ $0.3567 $201.5355
730+ $0.3448 $251.7040
975+ $0.3091 $301.3725
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,160 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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