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HUF75631SK8T

Part No HUF75631SK8T
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 5.5A 8-SOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 79nC @ 20V
Max Input Capacitance 1225pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 39 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 068298-HUF75631SK8T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUF75631SK8T CAD Model

Description

The HUF75631SK8T is an N-Channel MOSFET IC manufactured by Fairchild/ON Semiconductor.

  • Packaging: Reel
  • Mounting: SMD (SMT)
  • Power Dissipation: 2.5W (Ta)
  • Category: Discrete Semiconductor Product
  • Drive Voltage: 10V
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: 8-SOP
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 5.5A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 79nC @ 20V
  • Maximum Input Capacitance: 1225pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 39 mOhm @ 5.5A, 10V
  • Supply and Demand: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,970 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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