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Same model may have multiple batches, images only for reference.
HUFA75345S3S Real Image
Same model may have multiple batches, images only for reference.

HUFA75345S3S

Part No HUFA75345S3S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A D2PAK
Datasheet
HUFA75345S3S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 275nC @ 20V
Max Input Capacitance 4000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 325W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1044252-HUFA75345S3S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUFA75345S3S CAD Model

Description

The Fairchild/ON Semiconductor 429701 is a N-Channel MOSFET transistor that is ideal for use in discrete semiconductor products.

  • Manufacturer: Fairchild/ON Semiconductor
  • Product Name: 429701
  • Type: N-Channel MOSFET transistor
  • Category: Discrete Semiconductor Products
  • Power Dissipation: 325W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 75A (Tc)
  • Maximum Rds On @ Id,Vgs: 7 mOhm @ 75A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 275nC @ 20V
  • Maximum Input Capacitance: 4000pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: D2PAK (TO-263AB)
  • Temperature Range: -55°C to 175°C (TJ)
  • Status: Obsolete (EOL)
  • Packaging: Tube/rail

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