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Same model may have multiple batches, images only for reference.
HUFA75637S3S Real Image
Same model may have multiple batches, images only for reference.

HUFA75637S3S

Part No HUFA75637S3S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 44A D2PAK
Datasheet
HUFA75637S3S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 108nC @ 20V
Max Input Capacitance 1700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 155W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 44A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1044260-HUFA75637S3S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUFA75637S3S CAD Model

Description

The HUFA75637S3S is an N-channel MOSFET from Fairchild/ON Semiconductor.

  • Maximum Power Dissipation: 155W (Tc)
  • Continuous Drain Current: 44A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 108nC @ 20V
  • Maximum Input Capacitance: 1700pF @ 25V
  • Maximum Rds On: 30 mOhm @ 44A, 10V
  • Package: D2PAK (TO-263AB)
  • Application: surface mount applications

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