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Same model may have multiple batches, images only for reference.
HUFA75645S3S Real Image
Same model may have multiple batches, images only for reference.

HUFA75645S3S

Part No HUFA75645S3S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 238nC @ 20V
Max Input Capacitance 3790pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017083-HUFA75645S3S
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian HUFA75645S3S CAD Model

Description

The Fairchild/ON Semiconductor 017083-HUFA75645S3S is a N-channel MOSFET.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 75A at 25°C
  • Rds On (Max): 14 mOhm at 75A and 10V gate-source voltage
  • Gate-Source Voltage (Max): ±20V
  • Gate-Source Threshold Voltage: 4V at 250μA
  • Power Dissipation: 310W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Package: D2PAK (TO-263AB)
  • Drive Voltage: 10V
  • Input Capacitance (Max): 3790pF at 25V
  • Gate Charge (Max): 238nC at 20V

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26+ $3.9231 $102.0006
40+ $3.8005 $152.0200
55+ $3.6779 $202.2845
71+ $3.5553 $252.4263
95+ $3.1875 $302.8125
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