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Same model may have multiple batches, images only for reference.
HUFA76629D3S Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUFA76629D3S

Part No HUFA76629D3S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 20A DPAK
Datasheet
HUFA76629D3S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 1285pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 52 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1044306-HUFA76629D3S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUFA76629D3S CAD Model

Description

The Fairchild/ON Semiconductor HUFA76629D3S is an N-Channel MOSFET-type electronic component that can handle a maximum power dissipation of 110W (Tc).

  • Type: MOSFET
  • Maximum Power Dissipation: 110W (Tc)
  • Packaging: tube/rail
  • Mounting: SMD (SMT)
  • Category: obsolete (EOL)
  • Case/Package: TO-252AA
  • Popularity: medium
  • Supply and Demand Status: sufficient

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