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Same model may have multiple batches, images only for reference.
IRFR210BTM_FP001 Real Image
Same model may have multiple batches, images only for reference.

IRFR210BTM_FP001

Part No IRFR210BTM_FP001
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 2.7A DPAK
Datasheet
IRFR210BTM_FP001 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 9.3nC @ 10V
Max Input Capacitance 225pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 26W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 1.35A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047026-IRFR210BTM_FP001
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR210BTM_FP001 CAD Model

Description

The Fairchild/ON Semiconductor IRFR210BTM_FP001 is a N-Channel MOSFET with a Drain-Source Breakdown Voltage of 200V and a Continuous Drain Current of 2.7A at 25°C.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 2.7A @ 25°C
  • Maximum Rds On: 1.5 Ohm @ 1.35A and 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 9.3nC @ 10V
  • Max Input Capacitance: 225pF @ 25V
  • Package: D-Pak with a TO-252-3, DPak (2 Leads + Tab), SC-63 dimension
  • Status: Obsolete (EOL)
  • Common Use: Discrete Semiconductor Products
  • Popularity: Medium

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