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Same model may have multiple batches, images only for reference.
IRFS634B Real Image
Same model may have multiple batches, images only for reference.

IRFS634B

Part No IRFS634B
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 8.1A TO-220F
Datasheet
IRFS634B Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 4.05A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 069594-IRFS634B
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFS634B CAD Model

Description

The IRFS634B is a MOSFET transistor manufactured by Fairchild/ON Semiconductor.

  • Polarity: N-Channel
  • Power Dissipation: 38W (Tc)
  • Drive Voltage: 10V (Max Rds On)
  • Case: TO-220F
  • Operating Temperature: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 8.1A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 38nC @ 10V
  • Maximum Input Capacitance: 1000pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 450 mOhm @ 4.05A, 10V
  • Status: Obsolete (EOL)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2610 $58.7250
540+ $0.2148 $115.9920
835+ $0.2079 $173.5965
1,150+ $0.2010 $231.1500
1,480+ $0.1952 $288.8960
1,990+ $0.1744 $347.0560
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Availability: 4,246 pieces
MOQ: 225 pcs
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