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Same model may have multiple batches, images only for reference.
IRLR120ATF Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

IRLR120ATF

Part No IRLR120ATF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 8.4A DPAK
Datasheet
IRLR120ATF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 15nC @ 5V
Max Input Capacitance 440pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 35W (Tc)
Maximum Rds On at Id,Vgs 220 mOhm @ 4.2A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 161557-IRLR120ATF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLR120ATF CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a N-channel polarity power transistor that can dissipate up to 2.5W (Ta), 35W (Tc) of power.

  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 220 mOhm @ 4.2A, 5V
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 8.4A (Tc) @ 25°C
  • Mounting: surface
  • Package: D-Pak
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 15nC @ 5V
  • Maximum Input Capacitance: 440pF @ 25V
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5778 $52.0020
215+ $0.4741 $101.9315
330+ $0.4593 $151.5690
450+ $0.4445 $200.0250
585+ $0.4297 $251.3745
780+ $0.3852 $300.4560
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Availability: 1,000 pieces
MOQ: 90 pcs
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