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Same model may have multiple batches, images only for reference.
ISL9N302AS3ST Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

ISL9N302AS3ST

Part No ISL9N302AS3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A D2PAK
Datasheet
ISL9N302AS3ST Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 300nC @ 10V
Max Input Capacitance 11000pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 345W (Tc)
Maximum Rds On at Id,Vgs 2.3 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 024693-ISL9N302AS3ST
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian ISL9N302AS3ST CAD Model

Description

The Fairchild/ON Semiconductor ISL9N302AS3ST is a high-performance N-channel MOSFET transistor.

  • Maximum Drain-Source Voltage: 30V
  • Continuous Drain Current: 75A
  • On-Resistance: Low
  • Drive Voltage: 4.5V to 10V
  • Category: Discrete Semiconductor Products
  • Package: D2PAK (TO-263AB)
  • Market: Open market

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221+ $1.5696 $346.8816
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