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Same model may have multiple batches, images only for reference.
NDP603AL Real Image
Same model may have multiple batches, images only for reference.

NDP603AL

Part No NDP603AL
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 25A TO-220AB
Datasheet
NDP603AL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1100pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 22 mOhm @ 25A, 10V
Temperature Range - Operating -65°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 209145-NDP603AL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NDP603AL CAD Model

Description

The N-Channel MOSFET with a drain-source breakdown voltage of 30V and maximum Rds On @ Id,Vgs of 22 mOhm @ 25A, 10V is an obsolete (EOL) electronic component manufactured by Fairchild/ON Semiconductor. It comes in a TO-220-3 package and can dissipate up to 50W (Tc) of power.

  • Maximum gate-source voltage: ±20V
  • Maximum gate charge: 40nC @ 10V
  • Drive voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Gate-source threshold voltage: 3V @ 250μA

The supply and demand status is balanced.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2867 $50.1725
425+ $0.2353 $100.0025
660+ $0.2279 $150.4140
910+ $0.2206 $200.7460
1,175+ $0.2132 $250.5100
1,570+ $0.1912 $300.1840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,375 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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