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RFP14N05

Part No RFP14N05
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 50V 14A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 670pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 48W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 14A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 294077-RFP14N05
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian RFP14N05 CAD Model

Description

The Fairchild/ON Semiconductor RFP14N05 is an N-Channel MOSFET that is designed for use in Discrete Semiconductor Products.

  • Power Dissipation: 48W (Tc)
  • Drain-Source Breakdown Voltage: 50V
  • Continuous Drain Current @ 25°C: 14A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate-Source Voltage: ±10V
  • Maximum Rds On @ Id, Vgs: 100 mOhm @ 14A, 5V
  • Case/Package: TO-220AB
  • Dimensions: TO-220-3
  • Mounting Type: Through Hole
  • Drive Voltage: 5V
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Packaging: Tubes/Rails (50 pieces per package)

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