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RFP22N10

Part No RFP22N10
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 22A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 150nC @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 80 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 062510-RFP22N10
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RFP22N10 CAD Model

Description

The Fairchild/ON Semiconductor RFP22N10 is an N-channel MOSFET that is part of the Discrete Semiconductor Products category.

  • Package: TO-220AB
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Continuous Drain Current: 22A @ 25°C
  • Maximum Power Dissipation: 100W
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 80 mOhm @ 22A, 10V
  • Status: Obsolete
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.0656 $58.2464
46+ $2.5155 $115.7130
72+ $2.4368 $175.4496
98+ $2.3582 $231.1036
127+ $2.2797 $289.5219
170+ $2.0438 $347.4460
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Availability: 1,440 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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