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Same model may have multiple batches, images only for reference.
SSS6N70A
Same model may have multiple batches, images only for reference.

SSS6N70A

Part No SSS6N70A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
Power Dissipation (Max) 40W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 341741-SSS6N70A
Ultra Librarian 3D Model Ultra Librarian SSS6N70A CAD Model

Description

The SSS6N70A is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Drain to Source Voltage: 700V
  • Continuous Drain Current: 4A @ 25°C
  • Rds On: 1.8Ohm @ 2A and 10V
  • Gate Threshold Voltage: 4V @ 250μA
  • Power Dissipation: 40W @ 25°C
  • Package: TO-220-3 Full Pack
  • Gate Charge: 67nC @ 10V
  • Input Capacitance: 1200pF @ 25V
  • Operating Temperature: -55°C to 150°C

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