MRF6V3090NBR1

Part No MRF6V3090NBR1
Manufacturer Freescale Semiconductor - NXP
Catalog Transistors - FETs, MOSFETs - RF
Description RF ULTRA HIGH FREQUENCY BAND, N-
Sample
Rohs State rohs
ECAD Module
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Products specifications

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr Freescale Semiconductor - NXP
Package Bulk
Product Status Active
Technology LDMOS
Frequency 860MHz
Gain 22dB
Voltage - Test 50 V
Current - Test 350 mA
Power - Output 18W
Voltage - Rated 110 V
Mounting Type Chassis Mount
Package / Case TO-272BB
Supplier Device Package TO-272 WB-4
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 644210-MRF6V3090NBR1

Description

The MRF6V3090NBR1 is a high-power RF LDMOS transistor designed for applications in the 860MHz frequency range. It is suitable for use in RF power amplifiers for wireless communication systems. The transistor operates at a rated voltage of 110V and can deliver an output power of 18W. With a gain of 22dB, it provides excellent signal amplification. The MRF6V3090NBR1 is housed in the TO-272BB package, which is a chassis mount package designed for easy installation. It is a bulk package that includes 1 pc of the transistor. The device is manufactured by Freescale Semiconductor - NXP, a leading semiconductor company known for its high-quality products. With its advanced LDMOS technology, the MRF6V3090NBR1 offers high performance and reliability. It is an active product in the market and is widely used in various RF applications.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
1+ $166.6670 $166.6670
2+ $161.1120 $322.2240
3+ $144.4450 $433.3350
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Availability: 100 pieces
Order Increment : 1 pcs
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