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FGW50N60VD

Part No FGW50N60VD
Manufacturer Fuji Electric
Catalog OEM Parts (F - I)
Description Igbt, Single, 600V, 85A, TO-247-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-247
Collector Emitter Breakdown Voltage 600 V
Collector Emitter Saturation Voltage 1.6 V
Collector Emitter Voltage (VCEO) 600 V
Element Configuration Single
Height 20.95 mm
Length 15.9 mm
Max Collector Current 50 A
Maximum Operating Temperature 175 °C
Max Power Dissipation 360 W
Min Operating Temperature -40 °C
Mount Through Hole
Number of Pins 3
REACH SVHC Unknown
RoHS Compliant
Width 5.03 mm
Win Source Part Number 1059090-FGW50N60VD
Categories OEM Parts(F-I)
Manufacturer Fuji Electric
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FGW50N60VD CAD Model

Description

The FGW50N60VD is a Single Element Configuration IGBT Transistor manufactured by Fuji Electric.

  • Product: FGW50N60VD
  • Manufacturer: Fuji Electric
  • Type: Single Element Configuration IGBT Transistor
  • Collector Emitter Breakdown Voltage: 600 V
  • Collector Emitter Voltage (VCEO): 600 V
  • Maximum Collector Current: 50 A
  • Collector Emitter Saturation Voltage: 1.6 V
  • Mounting Type: Through Hole Mounting
  • Maximum Operating Temperature: 175 °C
  • Min Operating Temperature: -40 °C
  • RoHS Compliant: Yes
  • Max Power Dissipation: 360 W
  • Package: TO-247 Case / Package
  • Number of Pins: 3

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