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Part No 2301
Manufacturer Goford Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description P20V,RD(MAX)<[email protected],RD(MAX)<8
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Goford Semiconductor
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 56mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 2.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 405 pF @ 10 V
Power Dissipation (Max) 1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
Standard Package 3,000 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 540371-2301
Package Retail Package
Tool Type Remote Particle Counter
For Use With/Related Products Air Quality
Series *
Package Bag
Type Knurled, Straight
Color Black
Package Cut Tape (CT)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 2.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 10 V
Power Dissipation (Max) 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Ultra Librarian 3D Model Ultra Librarian 2301 CAD Model

Description

The Goford Semiconductor MOSFET (Metal Oxide) transistor is a high-quality electronic component designed for various applications.

  • Transistor Type: P-Channel
  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 3A @ 25°C
  • On-Resistance (Rds On): 56mOhm
  • Gate-Source Threshold Voltage (Vgs(th)): 900mV
  • Power Dissipation: 1W
  • Mounting: Surface Mountable
  • Package: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Gate Charge (Qg): 12 nC @ 2.5V
  • Input Capacitance (Ciss): 405 pF @ 10V
  • MSL Level: 3 (168 Hours)
  • REACH Status: Unaffected
  • Manufacturer: Goford Semiconductor

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