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Same model may have multiple batches, images only for reference.
2N3416
Same model may have multiple batches, images only for reference.

2N3416

Part No 2N3416
Manufacturer Harris Corporation
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 0.5A TO92-3 / Bipolar (BJT) Transistor NPN 50 V 500 mA 625 mW Through Hole TO-92-3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Manufacturer Harris Corporation
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 3mA, 50mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 2mA, 4.5V
Power - Max 625 mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Case / Package TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Base Product Number 2N341
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number 2156-2N3416
Standard Package 1
Win Source Part Number 1324017-2N3416
Ultra Librarian 3D Model Ultra Librarian 2N3416 CAD Model

Description

The Harris Corporation 2N3416 is a discrete semiconductor product that belongs to the category of transistors, bipolar (BJT), and single.

  • Transistor Type: NPN
  • Collector-Emitter Breakdown Voltage: 50 V
  • Maximum Collector Current: 500 mA
  • Vce Saturation: 300mV @ 3mA and 50mA
  • DC Current Gain: 75 @ 2mA and 4.5V
  • RoHS Compliance: Non-Compliant

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