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Same model may have multiple batches, images only for reference.
BUW64A NXP
Same model may have multiple batches, images only for reference.

BUW64A

Part No BUW64A
Manufacturer Harris Corporation
Catalog Transistors (BJT) - Single
Description TRANS NPN 90V 7A TO220
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Harris Corporation
Package Bulk
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 7 A
Voltage - Collector Emitter Breakdown (Max) 90 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 700mA, 7A
Current - Collector Cutoff (Max) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 200mA, 2V
Power - Max 50 W
Frequency - Transition 200MHz
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Standard Package 600 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 573699-BUW64A
Ultra Librarian 3D Model Ultra Librarian BUW64A CAD Model

Description

The 573699-BUW64A is an NPN bipolar transistor designed for discrete semiconductor applications.

  • Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
  • Power Dissipation: 50W
  • Collector-Emitter Breakdown Voltage: 90V
  • Collector Current (Ic): 7A
  • Vce saturation: 1.5V @ 700mA and 7A
  • DC current gain (hFE): 30 @ 200mA and 2V
  • Package: TO-220-3
  • Mounting: through-hole
  • Manufacturer: Harris Corporation
  • Status: active
  • Packaging: bulk
  • Standard Package: 600 pieces

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