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Same model may have multiple batches, images only for reference.
IRF151
Same model may have multiple batches, images only for reference.

IRF151

Part No IRF151
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-204AE
Package / Case TO-204AE
Standard Package 177 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 921424-IRF151
Ultra Librarian 3D Model Ultra Librarian IRF151 CAD Model

Description

The IRF151 is a N-Channel MOSFET transistor designed for use in discrete semiconductor products by Harris Corporation.

  • Vdss: 60V
  • Id: 40A @ 25°C
  • Rds On: 55mOhm @ 20A and 10V Vgs
  • Vgs(th): 4V @ 250μA
  • Power Dissipation: 150W
  • Mounting: Through hole using a TO-204AE package
  • Qg: 120nC @ 10V
  • Temperature Range: -55°C to 150°C
  • Status: Active
  • Manufacturer: Harris Corporation

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.0855 $60.5130
14+ $8.2756 $115.8584
22+ $8.0169 $176.3718
30+ $7.7581 $232.7430
39+ $7.4994 $292.4766
52+ $6.7233 $349.6116
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,970 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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