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Same model may have multiple batches, images only for reference.
RFP8P06LE Intersil
Same model may have multiple batches, images only for reference.

RFP8P06LE

Part No RFP8P06LE
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 5V
Rds On (Max) @ Id, Vgs 300mOhm @ 8A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 675 pF @ 25 V
Power Dissipation (Max) 48W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 294106-RFP8P06LE
Ultra Librarian 3D Model Ultra Librarian RFP8P06LE CAD Model

Description

The 294106-RFP8P06LE is a P-Channel MOSFET transistor designed for discrete semiconductor applications.

  • Vdss (Drain to Source Voltage): 60V
  • Id (Continuous Drain Current) @ 25°C: 8A
  • Rds On (Max): 300mOhm @ 8A, 5V
  • Qg (Gate Charge) @ 10V: 30nC
  • Package: TO-220-3
  • Mounting: Through-Hole
  • Power Dissipation: 48W
  • Temperature Range: -55°C to 175°C
  • Manufacturer: Harris Corporation

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72+ $2.4197 $174.2184
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128+ $2.2638 $289.7664
171+ $2.0293 $347.0103
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Availability: 1,060 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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