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IRF521

Name: IRF521
Brand: Harris Corporation
SKU: 921428
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF521
Manufacturer	Harris Corporation
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-CHANNEL POWER MOSFET
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Harris Corporation
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	270mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 25 V
Power Dissipation (Max)	60W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Standard Package	485 pcs
MSL Level	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	921428-IRF521
Ultra Librarian 3D Model	Ultra Librarian IRF521 CAD Model

Alternative Products

Description

The IRF521 is a N-Channel MOSFET transistor designed for use in discrete semiconductor products and manufactured by Harris Corporation.

Vdss: 80V
Id: 9.2A @ 25°C
Rds On (Max): 270mOhm @ 5.6A and 10V
Power Dissipation: 60W
Package: TO-220-3
Mounting: Through-hole
Qg: 15nC @ 10V
Ciss: 350pF @ 25V
Operating Temperature Range: -55°C to 175°C
Manufacturer: Harris Corporation
Status: Active

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
60+	$1.0095	$60.5700
140+	$0.8281	$115.9340
220+	$0.8027	$176.5940
300+	$0.7762	$232.8600
385+	$0.7508	$289.0580
515+	$0.6734	$346.8010

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 1,470 pieces

MOQ: 60 pcs

Order Increment : 1 pcs

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