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Same model may have multiple batches, images only for reference.
IRF641 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

IRF641

Part No IRF641
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1275 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 604431-IRF641
Ultra Librarian 3D Model Ultra Librarian IRF641 CAD Model

Description

The 604431-IRF641 is a N-Channel MOSFET transistor designed for high power applications.

  • Drain to Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 18A @ 25°C
  • On-Resistance (Rds On): 180mOhm @ 10A @ 10V
  • Gate-Source Threshold Voltage (Vgs(th)): 4V @ 250μA
  • Mounting: Through-hole
  • Package: TO-220-3
  • Power Dissipation: 125W
  • Manufacturer: Harris Corporation

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.9493 $58.9860
48+ $2.4200 $116.1600
74+ $2.3444 $173.4856
102+ $2.2688 $231.4176
132+ $2.1931 $289.4892
177+ $1.9663 $348.0351
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Availability: 8,030 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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