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Same model may have multiple batches, images only for reference.
IRF642 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

IRF642

Part No IRF642
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1275 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 342 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 604432-IRF642
Ultra Librarian 3D Model Ultra Librarian IRF642 CAD Model

Description

The IRF642 is an N-channel MOSFET transistor designed for high power applications.

  • Drain to Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 16A @ 25°C
  • On-Resistance (Rds On): 220mOhm @ 10A, 10V
  • Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
  • Maximum Power Dissipation: 125W
  • Package: TO-220-3
  • Mounting Type: Through-Hole

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