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Same model may have multiple batches, images only for reference.
IRF712 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

IRF712

Part No IRF712
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 135 pF @ 25 V
Power Dissipation (Max) 36W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 604481-IRF712
Ultra Librarian 3D Model Ultra Librarian IRF712 CAD Model

Description

The IRF712 is an N-channel MOSFET transistor designed for high-performance applications.

  • Drain-to-Source Voltage: 400V
  • Maximum Continuous Drain Current: 1.7A
  • On-Resistance: 5Ohm @ 1.1A and 10V
  • Gate Threshold Voltage: 4V @ 250μA
  • Package: TO-220-3
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5015 $60.0600
95+ $1.2321 $117.0495
150+ $1.1936 $179.0400
200+ $1.1550 $231.0000
260+ $1.1166 $290.3160
350+ $1.0011 $350.3850
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Availability: 4,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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