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Same model may have multiple batches, images only for reference.
IRFD1Z3 Intersil
Same model may have multiple batches, images only for reference.

IRFD1Z3

Part No IRFD1Z3
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description SMALL SIGNAL N-CHANNEL MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V
Power Dissipation (Max) 1W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip
Package / Case 4-DIP (0.300", 7.62mm)
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 160356-IRFD1Z3
Ultra Librarian 3D Model Ultra Librarian IRFD1Z3 CAD Model

Description

The 160356-IRFD1Z3 is an N-Channel MOSFET transistor designed for discrete semiconductor applications.

  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 400mA
  • On-Resistance: 3.2Ohm @ 250mA and 10V gate-source voltage
  • Mounting: through-hole mountable device
  • Package: 4-DIP
  • Manufacturer: Harris Corporation
  • Status: currently an active product in the market
  • Voltage and Current Handling Capabilities: suitable for various applications such as power amplification and switching

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