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Same model may have multiple batches, images only for reference.
IRFF433 Real Image
Same model may have multiple batches, images only for reference.

IRFF433

Part No IRFF433
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 450 V
Current - Continuous Drain (Id) @ 25°C 2.25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
Power Dissipation (Max) 25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-205AF (TO-39)
Package / Case TO-205AF Metal Can
Standard Package 116 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 875099-IRFF433
Ultra Librarian 3D Model Ultra Librarian IRFF433 CAD Model

Description

The 875099-IRFF433 is an N-Channel MOSFET transistor used in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 450V
  • Continuous Drain Current (Id): 2.25A @ 25°C
  • Maximum On-State Resistance (Rds On): 2Ohm @ 1.5A and 10V
  • Gate-Source Threshold Voltage (Vgs(th)): 4V @ a current of 250µA
  • Maximum Power Dissipation: 25W
  • Operating Temperature Range: -55°C to 150°C
  • Mounting: Through-hole
  • Package: TO-205AF Metal Can case
  • Gate Charge (Qg): 30nC @ 10V
  • Input Capacitance (Ciss): 600pF @ 25V
  • Series: Harris Corporation series
  • Package: Bulk package
  • Pieces: 116

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