The 2SC4926 is a silicon NPN epitaxial planar transistor manufactured by Hitachi. It is designed for high-frequency amplification applications. This transistor is commonly used in various RF and IF amplifier stages in communication equipment.

Applications:

• RF Amplifiers
• IF Amplifiers
• Oscillators
• Mixer Stages
• Communication Equipment

Features:

• NPN polarity
• High transition frequency (fT)
• Low noise figure
• High power gain
• Epitaxial planar construction for reliability

Benefits:

• Excellent high-frequency performance
• Low noise amplification
• Stable operation in RF circuits
• Suitable for use in various communication systems
• Good power gain for signal amplification

Specifications:

Key specifications for the 2SC4926 include:

• Collector-Base Voltage (VCBO): 30V
• Collector-Emitter Voltage (VCEO): 20V
• Emitter-Base Voltage (VEBO): 3V
• Collector Current (IC): 50mA
• Collector Dissipation (PC): 200mW
• Transition Frequency (fT): 6.5 GHz (Typical)
• Noise Figure (NF): 2.5 dB (Typical)

The 2SC4926 is typically packaged in a small surface mount package (SMT). Consult the official Hitachi datasheet for the most accurate and updated specifications. Proper impedance matching is crucial for optimal performance in high-frequency applications.